收藏本站
QS5U34
Transistors
1000
100
100
10
Ta=125 C
75 C
25 C
? 25 C
10
1
0.1
125 ° C
75 ° C
25 ° C
0.01
1
0.1
0.001
0.0001
? 25 ° C
0
0.1
0.2
0.3
0.4
0.5
0.6
0
10
20
30
40
Forward Voltage : V F [ V ]
Fig.10 Forward Temperature Characteristics
Reverse Voltage : V R [ V ]
Fig.11 Reverse Temperature Characteristics
Notice
1. SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low V F characteristics and therefore, higher leak current. Please consider enough the
surrounding temperature, generating heat of MOSFET and the reverse current.
2. This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
4/4
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
QS5U36TR MOSFET N-CH 20V 2.5A TSMT5
QS6J11TR MOSFET 2P-CH 12V 2A TSMT6
QS6K1TR MOSFET 2N-CH 30V 1A TSMT6
QS6K21TR MOSFET N-CH 45V 1A TSMT6
QS6M3TR MOSFET N+P 30,20V 1.5A TSMT6
QS6M4TR MOSFET N+P 30,20V 1.5A TSMT6
QS6U22TR MOSFET P-CH 20V 1.5A TSMT6
QS6U24TR MOSFET P-CH 30V 1A TSMT6
相关代理商/技术参数
QS5U36 制造商:ROHM 制造商全称:Rohm 功能描述:1.5V Drive Nch+SBD MOSFET
QS5U36TR 功能描述:MOSFET N Chan20V2.5A Load Switching RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS5V9912JRC 制造商:QUALITY SEMI 功能描述:
QS5V991-7JR1 制造商:QSI 功能描述:
QS5V99320QC 制造商:QUALITY 功能描述:QS5V993-2QC
QS5W1 制造商:ROHM 制造商全称:Rohm 功能描述:Midium Power Transistors (30V / 3A)
QS5W2 制造商:ROHM 制造商全称:Rohm 功能描述:Midium Power Transistors (50V / 3A)
QS5W2TR 制造商:ROHM Semiconductor 功能描述: